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| 2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A (Z) 2nd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.017 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SJ555 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -60 -240 -60 Unit V V A A A A mJ W C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -60 308 125 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 27 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.017 0.024 45 4100 2100 450 32 270 570 360 -1.1 115 Max -- -- -10 10 -2.0 0.022 0.036 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = -60A, VGS = 0 I F = -60A, VGS = 0 diF/ dt =50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS = 0 I D = -1mA, VDS = -10V I D = -30A, VGS = -10V Note4 I D = -30A, VGS = -4V Note4 I D = -30A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, I D = -30A RL = 1 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Note: 4. Pulse test t rr 2 2SJ555 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 10 PW Op 200 Pch (W) -1000 -300 I D (A) s 150 -100 -30 DC 10 = 10 ion 1 ms (T 0 s m s sh ot) C ) Channel Dissipation Drain Current 100 -10 -3 -1 -0.3 er at (1 50 Operation in this area is limited by R DS(on) c= 25 0 50 100 150 Tc (C) 200 Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Case Temperature Drain to Source Voltage V DS (V) -10 V -100 I D (A) Typical Output Characteristics -4.5 V -5 V -8 V -100 (A) Typical Transfer Characteristics V DS = -10 V Pulse Test 25 C -80 -4 V -80 ID Drain Current -60 -3.5 V -40 -3 V -20 VGS = -2.5 V 0 -4 -8 -12 Drain to Source Voltage -16 -20 V DS (V) -60 Drain Current -40 -20 75 C Tc = -25 C 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 3 2SJ555 Drain to Source Saturation Voltage vs. Gate to Source Voltage -2 Drain to Source Saturation Voltage V DS(on) (V) Drain to Source On State Resistance R DS(on) ( m ) Static Drain to Source on State Resistance vs. Drain Current 100 50 VGS = -4 V 20 -10 V 10 5 -1.6 -1.2 I D = -50 A -0.8 -0.4 -5 A 0 -4 -8 -12 Gate to Source Voltage -20 A -10 A -16 -20 V GS (V) 2 1 -1 -3 -10 -30 -100 -300 -1000 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) (m ) I D = -50 A 40 V GS = -4 V -10 A Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 50 -20 A 100 30 10 3 1 0.3 Forward Transfer Admittance vs. Drain Current Tc = -25 C 25 C 30 -50 A 75 C 20 V GS = -10 V -10,-20A 10 0 -40 V DS = -10 V -100 0 40 80 120 160 Case Temperature Tc (C) 0.1 -0.1 -0.3 -1 -3 -10 -30 Drain Current I D (A) 4 2SJ555 Body-Drain Diode Reverse Recovery Time 50000 20000 Capacitance C (pF) 1000 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 500 200 100 50 10000 5000 2000 1000 500 200 100 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Crss Coss Ciss 20 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 -10 -30 -100 -3 -1 -0.1 -0.3 Reverse Drain Current I DR (A) Dynamic Input Characteristics V DS (V) Switching Characteristics 0 1000 V GS (V) 0 V DD = -10 V -25 V -50 V V DS t d(off) 500 Switching Time t (ns) -20 -4 tf 200 100 50 20 10 -0.1 -0.3 tr Drain to Source Voltage -40 V GS V DD = -50 V -25 V -10 V -8 -60 -12 Gate to Source Voltage t d(on) V GS = -10 V, V DD = -30 V PW = 10 s, duty < 1 % = -3 -1 -10 -30 Drain Current I D (A) -100 -80 -100 0 I D = -60 A 320 80 160 240 Gate Charge Qg (nc) -16 -20 400 5 2SJ555 Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) -100 500 I AP = -60 A V DD = -25 V duty < 0.1 % Rg > 50 Reverse Drain Current I DR (A) -80 400 -60 -5 V -10 V V GS = 0 300 -40 200 -20 100 0 25 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin -15 V D. U. T 50 0 VDD 6 2SJ555 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 1.0 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin 10% Waveform 90% Vin -10 V 50 V DD = -30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf 7 2SJ555 Package Dimensions Unit: mm 3.2 0.2 0.5 typ 16.0 max 1.0 typ 5.0 0.3 5.0 max 1.5 typ 14.9 0.2 2.0 typ 20.1 max 1.6 typ 1.4 max 2.0 typ 18.0 0.5 2.8 typ 1.0 0.2 3.6 typ 0.9 typ 1.0 typ 0.6 0.2 0.3 typ 5.45 0.2 5.45 0.2 Hitachi Code EIAJ JEDEC TO-3P SC-65 -- 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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